1. Crystallography and Product Fundamentals of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic compound composed of silicon and carbon atoms in a 1:1 stoichiometric ratio, distinguished by its impressive polymorphism– over 250 known polytypes– all sharing strong directional covalent bonds but differing in stacking series of Si-C bilayers.
The most highly relevant polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal types 4H-SiC and 6H-SiC, each showing refined variants in bandgap, electron flexibility, and thermal conductivity that influence their viability for details applications.
The strength of the Si– C bond, with a bond energy of around 318 kJ/mol, underpins SiC’s phenomenal solidity (Mohs hardness of 9– 9.5), high melting point (~ 2700 ° C), and resistance to chemical degradation and thermal shock.
In ceramic plates, the polytype is commonly selected based upon the meant use: 6H-SiC prevails in structural applications because of its simplicity of synthesis, while 4H-SiC dominates in high-power electronic devices for its exceptional charge provider mobility.
The large bandgap (2.9– 3.3 eV depending on polytype) also makes SiC an outstanding electrical insulator in its pure form, though it can be doped to work as a semiconductor in specialized electronic tools.
1.2 Microstructure and Phase Pureness in Ceramic Plates
The performance of silicon carbide ceramic plates is seriously dependent on microstructural attributes such as grain dimension, thickness, phase homogeneity, and the presence of additional phases or impurities.
High-quality plates are generally made from submicron or nanoscale SiC powders with advanced sintering methods, causing fine-grained, fully thick microstructures that maximize mechanical toughness and thermal conductivity.
Pollutants such as totally free carbon, silica (SiO â‚‚), or sintering help like boron or aluminum should be meticulously regulated, as they can develop intergranular films that reduce high-temperature stamina and oxidation resistance.
Recurring porosity, also at low degrees (
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